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POWER DIODES

CONTENTS
1. Introduction
2. Diode Characteristics
3. Reverse Recovery Characteristics
4. Silicon Carbide Diodes

INTRODUCTION
A diode acts as a switch to perform various
functions, such as:
Switches in rectifiers
Freewheeling in switching regulators
Charge reversal of capacitor and energy transfer
between components
Energy feedback from load to the power source
Trapped energy recovery

Power diodes are similar to p-n junction signal


diodes.

Power diodes have larger power-, voltageand current-handling capabilities than


those of ordinary diodes.
Frequency response or switching speed is
low compared with that of signal diodes.
Power diodes play a significant role in
power electronics

DIODE CHARACTERISTICS
A power diode is a two-terminal pn junction device.
When anode is positive with respect to the cathode,
the diode is said to be forward biased and it
conducts.
When diode conducts it has a
small forward drop voltage
(which depends on
manufacturing process and
junction temperature).

V-I characteristics of diode

Operation in breakdown region will not be destructive, provided that the


power dissipation is within the safe level specified by manufacturers
data sheet.

Diode
current

Leakage Current or
Reverse Saturation
Current (10-15 to 10-6 A)

Diode
voltage
Thermal
Voltage

Empirical constant:
Emission coefficient or
Ideality Factor(1 to 2)

Boltzmanns constant: 1.3806x10-23 J/K


Absolute temperature in Kelvin (K=273+oC)

Electron charge: 11.6022x10-19 (C)

The forward voltage drop of a power diode


is VD=1.2V at ID=300A. Assuming that
n=2 and VT=25.7 mV, find the reverse
saturation current Is .

REVERSE RECOVERY
CHARACTERISTICS
Current in forward-biased junction diode is due
to the net effect of majority and minority carriers.
Once its forward current is reduced to zero, the
diode continues to conduct due to minority
carriers that remain stored in pn-junction and the
bulk semiconductor material.
The minority carriers require a certain time to
recombine with opposite charges and to be
neutralized.
This time is called reverse recovery time of the
diode.

IF : forward current
IRR : reverse recovery current
trr : reverse recovery time, measured from zero crossing to 25% of IRR
ta : time due to charge storage in depletion region of pn-junction
tb : time due to charge storage in the bulk semiconductor material

Depends on junction temperature, rate of fall of forward current, and


forward current prior to commutation, IF.

Softness factor
(SF)

The reverse recovery time of a diode is


trr=3s and the rate of fall of the diode
current is di/dt=30A/s. Determine:
a) The storage charge QRR, and
b) The peak reverse current IRR.

trr=3s and di/dt=30A/s.

Power Diodes
General purpose
Rating up to 6000V, 4500A
High speed (or fast recovery)
Rating up to 6000V, 1100A
Reverse recovery time 0.1 to 5s
Essential for high-frequency switching
Schottky
Low on-state voltage
Very small recover time (typically nanoseconds).
Leakage current increases with voltage rating
Rating limited to 100V, 300A

SILICON CARBIDE DIODES


Silicon Carbide (SiC) is a new material in
PE.
High performance characteristics:
Ultra low power loss and high reliability
No reverse recovery time
Ultra fast switching behavior
No temperature influence on the switching
behavior

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