Chng 5:

TRANSISTOR LNG CC (BJT)

ThS. Nguyn B Vng

 1. Cu to
0.150 in 0.150 in

0.001 in 0.001 in

E C E C
P n P n p n
B

B
Transistor c cu to gm cc min bn dn p v
n xen k nhau
 1. Cu to
Min bn dn th nht ca Transistor l
min Emitter (min pht) vi c im l c
nng tp cht ln nht, in cc ni vi
min ny gi l cc Emitter (cc pht).
Min th hai l min Base (min gc) vi
nng tp cht nh v dy ca n nh
c m, in cc ni vi min ny gi l cc
Base (cc gc).
Min cn li l min Collector (min thu) vi
nng tp cht trung bnh v in cc
tng ng l Collector (cc thu).
 1. Cu to
Tip gip p-n gia min Emitter v Base gi l
tip gip Emitter (JE).
Tip gip p-n gia min Base v min Collector
l tip gip Collector (JC).
V k hiu Transistor cn ch l mi tn t
gia cc Emitter v Base c chiu t bn dn p
sang bn dn n.
IE IC IE IC
E C E C
IB

IB
B B
PNP NPN
 1. Cu to
V mt cu trc, c th coi Transistor nh 2
diode mc i nhau
 1. Cu to
Cu to mch thc t ca mt Transistor n-p-n
 2.Nguyn l hot ng

Transistor lm vic, ngi ta phi a in p 1 chiu ti

cc in cc ca n, gi l phn cc cho Transistor

C C
B UCE>0 B UCE<0
npn pnp
UBE>0 E UBE<0 E
2.Nguyn l hot ng
s phn cc trong BJT
JE JC
s phn cc trong BJT
JE JC
 Tham s
H thc c bn v cc dng in trong
Transistor I E I B I C
H s truyn t dng in ca
Transistor C
I
IE

H s khuch i dng in ca
Transistor I
C
IB

Ta c h thc: IE IB (1 )
(1 )
3. Cc dng mc BJT
3.1 Mch chung Emitter (EC)

UOut

C
B

UIn E

EC
 H ng c tuyn vo
IB = f(UBE) khi UCE = const

VCE=2V

VCE=4V

VCE=6V
IB(A)

150
A

C V UOut 100
B
A
E
UIn V 50

EC
0
0.5 1 VBE (V)
 c tuyn truyn t v c tuyn ra ca s EC
H ng c tuyn ra: IC = f(UCE ) khi IB=const
H ng c tuyn truyn t: IC = f(IBE) khi UCE = const
UC

c tuyn truyn t IC(mA) c tuyn ra

E
UC

=8 V
V
E

IB=100A
=3

10

IB=80A
8

IB=60A
6

IB=40A
4

IB=20A
2

IB(A) 100 80 60 40 20 0 2 3 4 6 8 10 UCE(V)

 H s khuch i
Theo nh lut Kichp ta c I I I
E B C

IC I E ICB 0 IC I B ICB 0
Gii phng trnh vi IC, chng ta c mi quan h gia IC v IB
1
IC IB I CB 0 I B 1 I CB 0 I B I CB 0
1 1
Trong = (1-) l h s khuch i CE
( thng thng = 0,99; = 99)
Mt s mch EC
 +10V

R3
4k7
C2

R2 22uF
47k
C1 R4
Q1 10k
2N2222

22uF
R1
10k

C3
R5 100u
1k
3.2 Mch chung Base (BC)

NPN
E C

UIn UOut
B

BC
 H ng c tuyn vo
IE=f(UEB) khi in p ra UCB =const

UCB=6V
UCB=4V
UCB=2V
IE(mA)

6
NPN
E C
A
4
UIn UOut
V B V
2
BC

0
UEB (V) -1 -0.5
 H ng c tuyn ra v truyn t
c tuyn ra:IC= f(UCB) khi gi dng vo IE=const
c tuyn truyn t: IC=f(IE) khi khi UCB = const
UC

IC(mA)
B
UC

=8 V
V
B

IB=5mA
=2

10

IB=4mA
8

IB=3mA
6

IB=2mA
4

IB=1mA
2

IE(mA) 10 8 6 4 2 0 2 4 6 8 10 UCB(V)
3.3 Mch chung Collector (CC)

E UOut
B

UIn C

CC
 H ng c tuyn vo

UEC=40V
UEC=20V

UEC=30V
IB(A)

150
A

E V UOut 100
B
A
UIn C
V 50

CC
0
-3 -4.5 -6 VBC (V)
 c tuyn ra ca s CC
IE(mA)
IB=100A
10

IB=80A
8

IB=60A
6

IB=40A
4

IB=20A
2

0 2 4 6 8 10 UEC(V)
 ng thng ly in (Load line)

Phng trnh ng thng ly in : VCC=ICRC+VCE

vit li: IC = ( VCC VCE)/ RC = -VCE / RC + VCC /RC
ng ly in c v trn c tuyn ra qua 2 im
xc nh sau:
im ngng, IC = 0 VCE= VCC (im M)
im bo ha: VCE = 0 IC = VCC/ RC (im N)
ni 2 im M v N li ta c c ng ly in
Giao im ng ly in v ng phn cc IB chn
trc cho ta tr s im tnh Q.
ng thng ly in cho EC
IC(mA)
bo ha
N IB(A)
Q
ICQ

ngng

VCE(V)
0 VCEQ M
 Vai tr ca ng thng ly in

Phn gii mch Transistor.

Xc nh im tnh iu hnh Q.
Cho bit trng thi hot ng ca
transistor ( tc ng, bo ho, ngng).
Mch khuch i c tuyn tnh hay khng.
Thit k mch khuch theo nh ( chn
trc im tnh Q , tnh cc tr s linh kin)
Ch :
li dng in thay i theo v tr im
tnh iu hnh Q.
im tnh iu hnh Q thay i v tr theo
in th phn cc transistor v cn thay
i theo tn hiu xoay chiu ( AC) tc ng
vo mch .
 Phn gii bng th
IC(mA) IB(A)

VCE=4V
IB=100A
10 100

IB=80A
+8 80
IC
IBQ
t Q IB=60A t
ICQ 6 60

IB=40A
IC- 4 40

IB=20A
2 20
VBEQ

+ -
0
0 2 UC 4 6 UC 8 10 UCE(V) 0.5 1 VBE (V)
UCEQ

t
t
4. Phn cc ca BJT
 Vng hot ng ca BJT:

Vng tc ng: (Vng khuch i hay tuyn tnh)

Mi ghp B-E phn cc thun
Mi ghp B-C phn cc nghch
Vng bo ha:
Mi ghp B-E phn cc thun
Mi ghp B-C phn cc thun
Vng ngng: Mi ghp B-E phn cc nghch
 Phng php chung phn gii mch
phn cc gm ba bc:
Bc 1: Dng mch in ng vo xc nh
dng in ng vo (IB hoc IE).
Bc 2: Suy ra dng in ng ra t cc lin h
IC=IB hay IC=IE
Bc 3: Dng mch in ng ra tm cc
thng s cn li (in th ti cc chn, gia cc
chn ca BJT...)
4.1 Phn cc c nh ca BJT (Fixed
Bias)
Vcc

IC
RB RC
+
IB

VCE
+
VBE -
Phn cc c nh ca BJT (Fixed Bias)
Mch ng nn-pht (Base-Emitter):
VCC RB I B VBE 0
VCC VBE
IB
RB
Vi VBE = 0.7V nu BJT l Si v VBE = 0.3V nu l Ge.
Suy ra : IC=IB
Mch ng ra thu-nn (Collector-Base):
VCC RC I C VCE hay VCE VCC RC I C
y l phng trnh ng thng ly in.
 S bo ha ca BJT
S lin h gia IC v IB s quyt nh BJT c hot ng
trong vng tuyn tnh hay khng. BJT hot ng trong
vng tuyn tnh th ni thu - nn (CE) phi phn cc nghch.
BJT NPN v c th mch va xt ta phi c:
VC VB VC VB VBE VC VCC RC IC VCE VBE 0.7V
VCC 0.7
IC
RC
VCC 0.7
Nu C I
RC
th BJT s i dn vo hot ng trong vng bo ha. T iu
kin ny v lin h IC=IB ta tm c tr s ti a ca IB, t
chn RB sao cho thch hp.
 VCC
Nu IC tc VCE = 0V (thc ra khong 0.2V)
RC

Th VCVB, ni CB (thu-nn) phn cc thun, BJT hon ton nm

trong vng bo ha v dng in

VCC c gi l dng cc thu bo ha I

IC Csat
RC

VCC
I Csat
RC
 4.2 Phn cc n nh cc pht
Vcc
Mch c bn ging mch
phn cc c nh, nhng
cc emitter c mc thm

IC
mt in tr RE xung mass. RB RC
Cch tnh phn cc cng c +
cc bc ging nh mch

IB
VCE
phn cc c nh. +
VBE -
RE

IE
 Ta c: VCC RB I B VBE RE I E
VCC VBE
I E 1 I B IB
RB 1 RE
Thay

(suy ra IC t lin h: IC=IB)

mch CE(thu-pht): VCC RC I C VCE RE I E

Trong : I E I B IC IC

VCE VCC RC RE IC
 S bo ha ca BJT
Tng t nh trong mch phn cc c
nh, bng cch cho ni tt gia cc thu
v cc pht ta tm c dng in cc thu
bo ha ICsat
VCC
I Csat
RC RE
Ta thy khi thm RE vo, ICsat nh hn trong
trng hp phn cc c nh, tc BJT d bo
ha hn.
 4.3 Phn cc bng cu chia in th
Dng nh l Thevenin bin i thnh mch tng ng

Vcc Vcc

IC
RC RC
R1
IB
Q1
RBB
R2 VBB RE

IE
RE
 R1 R2 R2
Trong : RBB VBB VCC
R1 R2 R1 R2

Mch BE (nn pht): VBB RBB I B VBE RE I E

VBB VBE
Thay: IE=(1+)IB Suy ra: IB
RBB 1 RE
T lin h I C I B

Mch CE (thu pht): VCE VCC RC IC RE I E

V IC I E VCE VCC RC RE IC

Ngoi ra:
VC VCC RC IC
VB VBB RB I B
VE RE I E RE I c
 S bo ha ca BJT

Tng t nh phn trc:

VCC
I Csat
RC RE
 4.4 Phn cc vi hi tip in th
y cng l cch phn cc ci thin n nh cho hot
ng ca BJT
Vcc

IC
RC

IC
+
RB
IB

VCE
+
VBE -
RE
IE
 Mch nn pht: VCC R I RB I B RE I E VBE
'
C C

Vi I IC I B I E IC I B
'
C

VCC VBE
IB
RB RC RE

IC I B

VCE VCC RC RE IC
 4.5 Mt s dng mch phn cc khc

Vcc=+12V
100 / Si
50 / Si 100 / Si
RC=1k R1=40k Rc=5k
Q1 Q1 Q1

RB=100k RB=100k R2=10k RE=2k

RE=2k
VPP=-9V Vpp=-12V Vpp=-12V
5. Thit k mch phn cc
Khi thit k mch phn cc, ngi ta
thng dng cc nh lut cn bn v
mch in nh nh lut Ohm, nh lut
Kirchoff, nh l Thevenin..., t cc
thng s bit tm ra cc thng s cha
bit ca mch in.
 Th d 1
Cho mch phn cc vi c tuyn ng ra ca BJT nh
hnh di. Xc nh VCC, RC, RB.

Vcc IC(mA)
8
IC

RB RC 6 IB=40A

Q1 4
Si
IB

2
UCE(V)

0 10 20
 T ng thng ly in: VCE =VCC-RCIC
Ti trc trc ta UCE , khi IB=0 ta suy ra IC=0 v VCE =20V thay
vo phng trnh ng thng ly in ta c VCC=20V
Vcc
I Csat 8 mA RC 2.5 k
Rc
Ngoi ra: Transistor lm t vt liu thun bn dn Si do
VBE=0.7V v I VCC VBE 20V 0.7V 40 A
B
RB RB

RB 482.5 k
c cc in tr tiu chun ta chn: RB=470 K, RC=2.4 K..
 Th d 2
Thit k mch phn cc nh hnh di. IC=2mA, VCE=10V

Vcc=20V

IC
RB RC
2N4401
150 / Si
IB

RE 100F
IE
in tr RC v RE khng th tnh trc tip t cc thng
s bit. Vic a in tr RE vo mch l n nh
iu kin phn cc. RE khng th c tr s qu ln v
nh th lm gim VCE (s lm gim khuch i).
Nhng nu RE qu nh th n nh km. Thc
nghim ngi ta thng chn VE khong 1/10VCC.
1 1
VE VCC 20 2 V
10 10
VE VE 2V
RE 1 k
I E I C 2mA

VC VCE VE 20V 10V 2V

Rc 4 k
IC 2mA
 1 1
I B IC 2 13.333 A
150
VB VCC VBE VRE 20 0.7 2 17.3 V
VB 17.3V
RB 1.3 M
I B 13.333 A

Chn RB=1.2 M
 Th d 3
Thit k mch phn cc c dng nh hnh di

Vcc=20V

IC
R1 RC
VCE=10V
IB IC=2mA
min 80 / Si

RE 100F
IE

R2
 1 1
Ta c: VE VCC 20 2 V
10 10
VE VE 2V
RE 1 k
I E I C 2mA
VC VCE VE 20V 10V 2V
Rc 4 k
IC 2mA
VB VBE VE 0.7 2 2.7 V
in tr R1, R2 khng th tnh trc tip t in th chn B v
in th ngun. mch hot ng tt, ta phi chn R1, R2
sao cho c VB mong mun v sao cho dng qua R1, R2 gn
nh bng nhau v rt ln i vi IB.
Lc :
1
R2 RE 8 k
10
Ta c th chn: R2 6,8 k
R2
VB VCC 2.7 V
R1 R2

R1 43.57 k

Ta c th chn: R1=39k hoc 47k

6. BJT hot ng nh mt
chuyn mch
 Vcc=+5V

VIn(V)
RC=0.82k VOut(V)
5 VOut
Q1 5
VIn
DC=125
t RB=68k
0 t
t1 t2 0
t1 t2

ICE0
C

VCE=VCC
R=

E
 Th d: Xc nh RC v RB ca mch in nu ICsat=10mA
Vcc=+10V
DC=250/Si
VIn(V)
RC VOut(V)
10 VOut
Q1 10
VIn
t RB
0 t
t1 t2 0
t1 t2
I Csat
40 A
VCC V
I Csat 10 mA RC CC 1 k IB
RC DC
I Csat
Ta chn IB=60A m bo BJT hot ng trong vng bo ha
VIn VBE VIn 0.7
IB RB 155 k
RB IB

Do ta thit k: RC=1k
RB=150k
 VOut(V)
10

t
0
t1 t2
IC
100%
90%

10% t
t1 t2
0
td ts
tr tf
tOn tOff
Th d 1 BJT bnh thng:
ts=120ns ; tr=13ns
tf=132ns ; td=25ns
Vy: ton=38ns ; toff=132ns
Mt s ng dng ca BJT hot
ng nh mt chuyn mch
Using a transistor as a switch

PNP

NPN
Using a transistor switch with sensors
ng ngt n
7. Tnh khuch i ca BJT
 Vcc

R1 Rc C2
C1 VOut(t)
VIn(t) Q1
R2 RE CE

Gi s ta a mt tn hiu xoay chiu Vin(t) c dng sin,

bin nh vo chn B ca BJT khi ta c:
VB(t)=VB+Vin(t)
Cc t lin lc C1 v C2 c chn nh th no c
th xem nh ni tt -dung khng rt nh - tn s ca
tn hiu.
Nh vy tc dng ca cc t lin lc C1, C2 lm cho
thnh phn xoay chiu ca tn hiu i qua v ngn thnh
phn phn cc mt chiu.
 Vcc VIn(t)

t
R1 Rc C2 0
C1 VOut(t)
VIn(t) Q1
VB(t)
R2 RE CE

t
VB
VB(t) >VBIB IC VC(t)
VC(t)=VCC-RCiC(t)
VB(t) <VBIB IC
VC(t)=VCC-RCiC(t)
t
VOut(t) ngc pha vi VIn(t). VC
VOut(t)
VOut (t )
AV
VIn (t ) t
l khuch i hay li in 0

th ca mch
 Cha kha phn gii v xc nh cc thng s ca
mch l mch tng ng xoay chiu.
vo
li in th: AV
vi
io
li dng in: AV
ii
vi
Tng tr vo: Zi
ii
vo
Tng tr ra: Zo +
io
ii
+ io
vo zo
zi Rc
vi R1 R2
- -
 Dng mch tng ng

Mch tng
ng

kiu mu re thng s h

n gin y n gin y
 Mch cc Emitter v Collector chung

kiu mu re thng s h
Dng n gin Dng n gin
ib ic ib ic
B B
re i b h ie h fe .i b
E
E

Dng y Dng y
ib ic B ib ic C
B h ie h fe .i b
re i b h re .vCE r0 1
E ~ h 0e
E
 Mch cc nn chung

kiu mu re thng s h
Dng n gin Dng n gin
E ie ic C ie ic
E
re i e h ie h fb .i e
B B

Dng y Dng y

E ie ic C E ie ic
h ie
re i e r0 1 h fb .i e r0 1
h 0b h re .vcb h 0b
B
~ B
 Cc lin h cn ch : 26mV 26mV
re
IC IE
re h ie h fe re h ib h fb 1

Ngoi ra:
v be v be i c 1
re . i b g m .v be
ib ic i b g m
;

Do ngun ph thuc ib c th thay th bng ngun gm.vbe

8. Mch khuch i cc pht (E)
chung
 Vcc
ii ib
+ +
B C
RB Rc C2
re i b io
C1 Vo
vi Rb E vo
Q1 Rc
Re Zo
RE Zi Zb
- -

Tr s do nh sn xut cho bit

26mV
Tr s re c tnh t mch phn cc: re
IC
T mch tng ng ta tm c cc thng s ca mch.
 vo
li in th: A V
vi
Ta c: vo .i b .R C vi .re .ib 1 R E .ib
Suy ra: vo .i b .R C .R C
AV
vi .re .i b 1 R E .i b .re 1 R E

Do 1 +
ii ib +
RC B C
nn A V i b
re R E re io

vi Rb E vo
Nu R E re Rc
Re Zo
RC Zi Zb
- -
th AV
RE
Du - cho thy vo v vi ngc pha
 vi
Tng tr vo: z i
ii
vi .re .i b 1 R E .i b
Ta t: z b .re 1 R E re R E R E
ib ib
Suy ra: zi R B // z b
io
li dng in:A i
ii
vo vi vo z i zi
io i i A i . Hay Ai AV .
RC zi vi RC RC
 vo ib io
Tng tr ra: zo B
i b
C
re
io +

vi=0
Rb E ~ vo
Rc
-
Re

tnh tng tr ra ca mch, u tin ta ni tt ng vo (vi=0);

p mt ngun gi tng c tr s vo vo pha ng ra nh trn,
vo
xong lp t s zo
io
Khi vi=0 ib = 0 ib=0 (tng ng mch h) nn

vo
zo RC
io
Trong trng hp ni thm CE hoc ni chn E xung mass
Vcc Vcc

RB Rc C2 C2
C1 RB Rc
Vo C1
Vi
Vo
Q1
Vi Q1
RE CE

Mch tng ng

ii ib
+ +
B C
re i b io
vi vo
Rb E
Rc
Zi Zo
- -
Phn gii mch ta s tm c:

vo RC
AV
vi re
vi
z i R B // re
ii
zo R C
zi
Ai A V
RC
 Mch khuch i cc pht chung vi kiu
phn cc bng cu chia in th v n nh
cc pht
Vcc
ii ib
+ +
B C
Rc C2
C1 R1
re i b io
Vo vi
vo
Vi Q1 E
R1 R2 Rc
R2
RE Zi Re Zo
Zb
- -

AV
RC

RC zi R1 // R 2 // z b
re R E RE
zb re R E R E
Ai A V
zi zo R C
RC
 Trong trng hp ni thm CE hoc ni chn E xung mass
Vcc Vcc

Rc C2
C1 R1 Rc C2
Vo C1 R1
Vi Q1 Vo
R2 Vi Q1
RE CE R2

Mch tng ng

RC
+
ii ib + AV
B C rE
re i b io zi R1 // R 2 // z b
vi vo
R1 R2 E
Rc z b rE
Zi Zo
-
Zb
-
zo R C
zi
Ai A V
RC
 Mch khuch i cc pht chung phn cc
bng hi tip in th v n nh cc pht
Vcc i Rb
ii ib
Rc C2 + +
RB B C
C1 Vo
re i b io
Vi vi vo
Q1 E
Rc
RE Zi Re Zo
- -

AV
vo

RC

RC .R E .R B
zi
vi re R E RE R B .R E . A V
zi
Ai A V . zo R C // R B
RC
9. Phn gii theo thng s h n gin
lin h 2 mch tng ng

h ie re
h fe
h oe 1
ro
h ib re
h fb
 Mch khuch i cc pht chung
Vcc

Rc C2
C1 R1
Vo
Vi Q1
R2
RE CE

Mch tng ng
ii ib
+ +
B C
h ie h fei b io
vi vo
R1 R2 E
Rc
Zi Re Zo
Zb
- -
 Phn gii mch tng ng ta tm c
Tng tr vo Zi=R1//R2//Zb
vi: Zb=hie+(1+hfe)RE=hie+hfeRE
li in th: v
AV o
vi
Ta c: vo h fe .i b .R C
vi hie .ib 1 h fe R E .ib
vo h fe .ib .R C h fe .R C h fe .R C
AV
vi hie .ib 1 h fe R E .ib h ie 1 h fe R E h ie h fe .R E

RC
Thng h ie h fe .R E AV
RE
 Tng tr ra: Zo=RC
io
li dng in: A i
ii
vo vi
io ii
RC zi

vo zi zi
Ai . Hay A i A V .
vi R C RC
10. MT S NG DNG KHUCH I CA BJT
mch khuch i micro dng cho my tng m
Mch to dao ng sng hnh sin
Mch a hi t dao ng dng tranzito lng cc

1 1
f
T 0.69R B2C1 0.69R B1C2
Hnh dng thc ca Transistor BJT