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Power MOSFETs

Two Types
Depletion Type
Channel region is already diffused between the Drain and Source
Deplete, or pinch-off the Channel
Enhancement Type
No channel region exists between the Drain and Source
Invert the region between the Drain and Source to induce a
channel

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N-Channel Depletion MOSFET

Normally Reverse-Bias the Gate-Source Junction

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N-Channel Enhancement
MOSFET

The Gate-Source Junction will be Forward-Biased


The bias voltage must be greater than a threshold voltage
A Channel region is induced between the Drain and Source
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N-Channel DMOS Powe MOSFET

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Transfer and Output
Characteristics

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Switching Characteristics

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Switching Waveforms and
Times

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Turn-on Delay, td(on) = time to charge the input
capacitance to VT
Rise time, tr = Charging time to charge the input capacitance
to the full gate voltage, VGSP in order to drive the transistor
into the linear region of operation

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Turn-off delay time, td(off) = time for the input capacitance to
discharge from overdrive voltage V1 to pinch-off.
VGS must decrease significantly for VDS to rise.
Fall time, tf = time for the input capacitance to discharge from
pinch-off to the threshold voltage.

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MOSFET vs BJT
Parameter MOSFET BJT

Switching Loss Low High

Conduction Loss High Low

Controllability Voltage Control Current Control

Temperature Coefficient Positive Negative

Rating Upto 500 V, 140 A Upto 1200 V, 800 A

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Insulated Gate Bipolar
Transistor

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Equivalent Model

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Transfer & Output
Characteristics

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Switching
Characteristics

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Triggering circuit for
SCR

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Triggering Methods of
SCR
R and R-C Triggering
Resistance Trigger circuit
R-C Half-wave Trigger Circuit
R-C Full-wave Trigger Circuit
UJT Oscillator Triggering
Ramp Triggering
Ramp and Pedestal Triggering
Pulse Transformer in Triggering

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Resistance Triggering

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R-C Half-Wave
Triggering

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R-C Full-Wave
Triggering

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UJT Oscillator Triggering

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Ramp Triggering

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Ramp-Pedestal
Triggering

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Pulse Transformer in Firing
Circuits

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