Professional Documents
Culture Documents
Semiconductor
Devices
How The Single Crystal Silicon is Obtained
Refining [EGS]
Czochralski (CZ)
Float Zone (FZ)
CZ Process FZ Process
-- Crucible -- No Crucible
(Impurities) Highly pure Si
Colorless Evaporation
Volatile Liquid Condensation
Stage 4 CVD of Si
SiHCl3
Poly EGS
EGS
SiO2 + 2C Si + 2CO
Coal
Coke or wood chips
Si
2000oC SiC
SiO gasses
CO
12-14 Kwh/Kg
Al
Si
Fe
Stage 2 SiHCl3
MGS SiHCl3
Anhyd HCl Gasses at 300oC
Siemens Process
2SiHCl3 + 2H2 2Si(s) + 6HCl
1950s EGS
EGS Purity SCS
FZ Process
EGS
SCS
1. CZ Process 2. FZ Process
CZ Process
1950s SC
1960s Ingots
CZ Growth Sequence
Silica Crucible
EGS Diluted Silicon Alloy
Si 1421oC
5mm d
100-300mm Length
Relatively cooler
Eliminating dislocation
Dash Process
Temperature
Fluctuation
ADC
CZ
1. Furnance
3. Ambient Control
4. Control System
CZ
FZ
FZ Process
Highly pure SCS
Aluminum Oxyde
Glycerin